US Patent Issued to SUN YAT-SEN UNIVERSITY on July 21 for "GaN-based trench metal oxide Schottky barrier diode and preparation method therefor" (Chinese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,204, issued on July 21, was assigned to SUN YAT-SEN UNIVERSITY (Guangdong, China). "GaN-based trench metal oxide Schottky barrier diode and... Read More

US Patent Issued to Canon on July 21 for "Resonant tunneling diode, oscillator and detection system" (Japanese Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,205, issued on July 21, was assigned to Canon K.K. (Tokyo). "Resonant tunneling diode, oscillator and detection system" was invented by Tat... Read More

US Patent Issued to GlobalFoundries U.S. on July 21 for "Heterojunction bipolar transistors including an intrinsic base with an asymmetrical dopant depth profile" (German, American Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,206, issued on July 21, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.). "Heterojunction bipolar transistors including an intrinsic... Read More

US Patent Issued to NXP on July 21 for "Semiconductor device with a monocrystalline extrinsic base and method therefor" (Dutch, American Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,207, issued on July 21, was assigned to NXP B.V. (Eindhoven, Netherlands). "Semiconductor device with a monocrystalline extrinsic base and ... Read More

US Patent Issued to Mitsubishi Electric on July 21 for "Semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,208, issued on July 21, was assigned to Mitsubishi Electric Corp. (Tokyo). "Semiconductor device" was invented by Tomohito Kudo (Tokyo). A... Read More

US Patent Issued to FUJI ELECTRIC on July 21 for "Semiconductor device for improving on voltage and saturation voltage" (Japanese Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,209, issued on July 21, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan). "Semiconductor device for improving on voltage and satura... Read More

US Patent Issued to Mitsubishi Electric on July 21 for "Manufacturing method for semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,210, issued on July 21, was assigned to Mitsubishi Electric Corp. (Tokyo). "Manufacturing method for semiconductor device" was invented by ... Read More

US Patent Issued on July 21 for "Semiconductor optoelectronic integrated circuit and methodology for making same employing gate-all-around epitaxial structures" (New Hampshire Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,212, issued on July 21. "Semiconductor optoelectronic integrated circuit and methodology for making same employing gate-all-around epitaxia... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on July 21 for "FinFETs with low source/drain contact resistance" (Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,213, issued on July 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-chu, Taiwan). "FinFETs with low source/drain cont... Read More

US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on July 21 for "Semiconductor device with spacer and C-shaped channel portion, method of manufacturing semiconductor device with spacer and C-shaped channel portion, and electronic apparatus" (New York Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,214, issued on July 21, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing). "Semiconductor device with sp... Read More

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