'छोटी लापरवाही से भी बड़े हादसे '

सीतामढ़ी, अप्रैल 21 -- सीतामढ़ी। स्कूली बच्चों व शिक्षकों ने मॉकड्रिल के माध्यम से अग्नि सुरक्षा का तरीका जाना। अग्निशमन सेवा सप्ताह के सातवें दिन अनुमंडल अग्निशामालय के अधिकारियों एवं कर्मियों द्वारा ... और पढ़ें

US Patent Issued to SAMSUNG ELECTRONICS on April 21 for "Three-dimensional semiconductor memory device, method of fabricating the same, and electronic system including the same" (South Korean Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,547, issued on April 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Three-dimensional semiconductor memory dev... और पढ़ें

US Patent Issued to Yangtze Memory Technologies on April 21 for "Three-dimensional memory device and fabrication method" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,548, issued on April 21, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Three-dimensional memory device and fabrica... और पढ़ें

US Patent Issued to MACRONIX International on April 21 for "Memory device with reduced global selection line structures and method of fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,549, issued on April 21, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan). "Memory device with reduced global selection l... और पढ़ें

US Patent Issued to SK hynix on April 21 for "Memory device with defect-free slits" (South Korean Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,550, issued on April 21, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Memory device with defect-free slits" was invented by Ho... और पढ़ें

US Patent Issued to Kioxia on April 21 for "Semiconductor storage device" (Japanese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,551, issued on April 21, was assigned to Kioxia Corp. (Tokyo). "Semiconductor storage device" was invented by Go Oike (Mie Mie, Japan). A... और पढ़ें

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TAIWAN UNIVERSITY, NATIONAL TAIWAN NORMAL UNIVERSITY on April 21 for "Memory device and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,552, issued on April 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan), NATIONAL TAIWAN UNIVERSITY (Tai... और पढ़ें

US Patent Issued to Semiconductor Energy Laboratory on April 21 for "Semiconductor device and electronic device" (Japanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,553, issued on April 21, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Kanagawa-ken, Japan). "Semiconductor device and electro... और पढ़ें

US Patent Issued to Intel on April 21 for "Multi-storage element single-transistor crosspoint memory systems at low temperatures" (Oregon Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,554, issued on April 21, was assigned to Intel Corp. (Santa Clara, Calif.). "Multi-storage element single-transistor crosspoint memory sys... और पढ़ें

US Patent Issued to International Business Machines on April 21 for "Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAM" (New York, California Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,555, issued on April 21, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Multilayered magnetic free layer structure... और पढ़ें

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