US Patent Issued to International Business Machines on July 21 for "Stacked field-effect transistors having latch cross-coupling connections" (New York, New Hampshire, Vermont Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,243, issued on July 21, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Stacked field-effect transistors having latc... Read More

US Patent Issued to INTERNATIONAL BUSINESS MACHINES on July 21 for "Deep backside power rail cut" (New York Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,244, issued on July 21, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.). "Deep backside power rail cut" was invented b... Read More

US Patent Issued to SAMSUNG ELECTRONICS on July 21 for "Integrated circuit device" (South Korean Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,245, issued on July 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Integrated circuit device" was invented by J... Read More

US Patent Issued to International Business Machines on July 21 for "Semiconductor contact area matching" (New York Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,246, issued on July 21, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Semiconductor contact area matching" was inv... Read More

US Patent Issued to International Business Machines on July 21 for "Steep-switching transistor including three-dimensional Dirac energy filter" (Swiss Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,247, issued on July 21, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Steep-switching transistor including three-d... Read More

US Patent Issued to GlobalFoundries U.S. on July 21 for "Transistor structures with interleaved body contacts and gate contacts" (American, Indian Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,248, issued on July 21, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.). "Transistor structures with interleaved body contacts and ... Read More

US Patent Issued to FLOSFIA on July 21 for "Electrically-conductive metal oxide film including a metal oxide having a first metal selected from a metal of group 4 of the periodic table and a second metal selected from a metal of group 13 of the periodic table, and semiconductor element and semiconductor device including the same" (Japanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,249, issued on July 21, was assigned to FLOSFIA INC. (Kyoto, Japan). "Electrically-conductive metal oxide film including a metal oxide havi... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TAIWAN UNIVERSITY on July 21 for "Semiconductor device and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,250, issued on July 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Ta... Read More

US Patent Issued to Adeia Semiconductor Solutions on July 21 for "Method of forming nanosheet field effect transistors with partial inside spacers" (New York, Vermont Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,251, issued on July 21, was assigned to Adeia Semiconductor Solutions LLC (San Jose, Calif.). "Method of forming nanosheet field effect tra... Read More

US Patent Issued to NXP USA on July 21 for "Transistor gate structure with insulating layer and method of fabrication therefor" (Arizona Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,252, issued on July 21, was assigned to NXP USA INC. (Austin, Texas). "Transistor gate structure with insulating layer and method of fabric... Read More

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