US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Transistor, semiconductor device, and semiconductor structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,200, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Transistor, semiconductor device, a... Read More

US Patent Issued to Century Technology (Shenzhen) on Sept. 1 for "Thin film transistor, thin film transistor array substrate and method of manufacturing thin film transistor" (Taiwanese, Chinese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,201, issued on Sept. 1, was assigned to Century Technology (Shenzhen) Corporation Limited (Shenzhen, China). "Thin film transistor, thin fi... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Integrated circuit and formation method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,202, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Integrated circuit and formation me... Read More

US Patent Issued to Fujian Jinhua Integrated Circuit on Sept. 1 for "Semiconductor device and fabricating method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,203, issued on Sept. 1, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China). "Semiconductor device and fabrica... Read More

US Patent Issued to IOTMEMORY TECHNOLOGY on Sept. 1 for "Non-volatile memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,204, issued on Sept. 1, was assigned to IOTMEMORY TECHNOLOGY INC. (Taipei City, Taiwan). "Non-volatile memory device" was invented by Der-T... Read More

US Patent Issued to Intel on Sept. 1 for "3D source and drain contacts tuned for PMOS and NMOS" (Oregon Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,205, issued on Sept. 1, was assigned to Intel Corp. (Santa Clara, Calif.). "3D source and drain contacts tuned for PMOS and NMOS" was inven... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Semiconductor device including two-dimensional material and electronic apparatus including the semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,206, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor device including two-dimens... Read More

US Patent Issued to NANJING UNIVERSITY on Sept. 1 for "Structure of two-dimensional material-based device having air-gap and method for preparing same" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,207, issued on Sept. 1, was assigned to NANJING UNIVERSITY (Nanjing, China). "Structure of two-dimensional material-based device having air... Read More

US Patent Issued to Institute of Semiconductors, Chinese Academy of Sciences on Sept. 1 for "Method for fabricating semiconductor structure having enhanced hole linear Rashba spin-orbit coupling effect" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,208, issued on Sept. 1, was assigned to Institute of Semiconductors, Chinese Academy of Sciences (Beijing). "Method for fabricating semicon... Read More

US Patent Issued to IDEAL SEMICONDUCTOR DEVICES on Sept. 1 for "Combined charge balance and edge termination surface passivation for a semiconductor device and methods of fabricating the same" (Pennsylvania Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,209, issued on Sept. 1, was assigned to IDEAL SEMICONDUCTOR DEVICES INC. (Bethlehem, Pa.). "Combined charge balance and edge termination su... Read More

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