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US Patent Issued to Kioxia on June 30 for "NAND flash memory device with improved short circuit prevention" (Japanese Inventor)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,286, issued on June 30, was assigned to Kioxia Corp. (Tokyo). "NAND flash memory device with improved short circuit prevention" was invente... Read More


US Patent Issued to Sandisk Technologies on June 30 for "Three-dimensional memory device containing scaleless staircase structures and methods of forming the same" (Japanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,287, issued on June 30, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Three-dimensional memory device containing scaleless... Read More


US Patent Issued to Kioxia on June 30 for "Semiconductor device and method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,288, issued on June 30, was assigned to Kioxia Corp. (Tokyo). "Semiconductor device and method for manufacturing semiconductor device" was ... Read More


US Patent Issued to Sandisk Technologies on June 30 for "Memory device including word line contact strips and methods of forming the same" (Japanese, American Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,289, issued on June 30, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Memory device including word line contact strips and... Read More


US Patent Issued to MACRONIX International on June 30 for "Memory device and method of fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,290, issued on June 30, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan). "Memory device and method of fabricating the sam... Read More


US Patent Issued to Sandisk Technologies on June 30 for "Memory device containing ferroelectric-spacer-ferroelectric memory elements and method of making the same" (California Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,291, issued on June 30, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Memory device containing ferroelectric-spacer-ferroe... Read More


US Patent Issued to SK hynix on June 30 for "Semiconductor device including a plurality of dielectric layers stacked on ferroelectric layer" (South Korean Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,292, issued on June 30, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor device including a plurality of dielectric l... Read More


US Patent Issued to Micron Technology on June 30 for "Memory device assembly with a leaker device" (Idaho, Colorado Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,293, issued on June 30, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory device assembly with a leaker device" was invented b... Read More


US Patent Issued to UNITED MICROELECTRONICS on June 30 for "Resistive memory device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,294, issued on June 30, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Resistive memory device and manufacturing m... Read More


US Patent Issued to MACRONIX INTERNATIONAL on June 30 for "Three dimensional semiconductor device stack, system having the same, and method of operating three dimensional semiconductor device stack" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,295, issued on June 30, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan). "Three dimensional semiconductor device stack, s... Read More