ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,286, issued on June 30, was assigned to Kioxia Corp. (Tokyo). "NAND flash memory device with improved short circuit prevention" was invente... Read More
ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,287, issued on June 30, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Three-dimensional memory device containing scaleless... Read More
ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,288, issued on June 30, was assigned to Kioxia Corp. (Tokyo). "Semiconductor device and method for manufacturing semiconductor device" was ... Read More
ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,289, issued on June 30, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Memory device including word line contact strips and... Read More
ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,290, issued on June 30, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan). "Memory device and method of fabricating the sam... Read More
ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,291, issued on June 30, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Memory device containing ferroelectric-spacer-ferroe... Read More
ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,292, issued on June 30, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor device including a plurality of dielectric l... Read More
ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,293, issued on June 30, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory device assembly with a leaker device" was invented b... Read More
ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,294, issued on June 30, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Resistive memory device and manufacturing m... Read More
ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,295, issued on June 30, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan). "Three dimensional semiconductor device stack, s... Read More